采用射频磁控溅射技术在Sr Ti O_3(100)衬底上制备Fe_(81)Ga_(19)薄膜。利用XRD、AFM和VSM表征了Fe_(81)Ga_(19)薄膜的生长取向、内应力、表面形貌和磁性,研究了不同溅射功率(60~100 W)对Fe_(81)Ga_(19)薄膜结构和磁性能的影响。结果表明,所有薄膜主要以A_2相和L1_2相存在。随着溅射功率的增大,A_2相衍射峰的强度缓慢降低,内应力显著增加,表面粗糙度降低,薄膜的剩余磁化强度和饱和磁化强度明显减小,而矫顽力保持不变,都为50 Oe。
A set of stacked ribbons with the composition of Fe77Ga23 were prepared with different wheel velocities of 7 m/s, 12.5 m/s and 25 m/s(named as S7, S12.5 and S25, respectively). High resolution X-ray diffraction patterns of these ribbons show that all the ribbons present the disordered A2 structure, whereas an additional modified-DO3 phase is detected in S12.5 and S25. S25 has stronger(100) texture than other two samples. Ga K-edge extended X-ray absorption fine structure results indicate that both bond distance and the number of Ga atoms in the second neighbor shell around Ga decrease with increasing wheel velocity. No Ga cluster is detected in the studied ribbons. A short-range ordering Ga-rich phase and large local strain have no obvious influence on magnetostriction of S7. It is believed that both the(100) texture and the additional modified-DO3 phase play a positive role in magnetostrictive properties of Fe77Ga23 ribbons.