A self aligned InGaP/GaAs power HBTs for L band power amplifier with low bias voltage are described.Base emitter metal self aligning,air bridge,and wafer thinning are used to improve microwave power performance.A power HBT with double size of emitter of (3μm×15μm)×12 is fabricated.When the packaged HBT operates in class AB at a collector bias of 3V,a maximum 23dBm output power with 45% power added efficiency is achieved at 2GHz.The results show that the InGaP/GaAs power HBTs have great potential in mobile communication systems operating at low bias voltage.
采用全耗尽的 In Ga P材料在基区 Ga As表面形成钝化边 (passivation ledge)的方法 ,研制出了带钝化边的自对准 In Ga P/Ga As异质结双极晶体管 (HBT) .通过对不同尺寸、有无钝化边器件性能的比较得出 :钝化边对提高小尺寸器件的直流增益有明显效果 ,对器件的高频特性无明显影响 .此外 ,钝化边的形成改善了所有实验器件的长期可靠性 .
