A novel capacitive biaxial microaccelerometer with a highly symmetrical microstructure is developed. The sensor is composed of a single seismic mass, grid strip, supporting beam, joint beam, and damping adjusting combs. The sensing method of changing capacitance area is used in the design,which depresses the requirement of the DRIE process, and de- creases electronic noise by increasing sensing voltage to improve the resolution. The parameters and characteristics of the biaxial microaccelerometer are discussed with the FEM tool ANSYS. The simulated results show that the transverse sensitivity of the sensor is equal to zero. The testing devices based on the slide-film damping effect are fabricated, and the testing quality factor is 514, which shows that the designed structure can improve the resolution and proves the feasibility of the designed process.
DRIE(Deep Reactive Ion Etching)工艺加工的高深宽比梳齿电容不能保证绝对平行.本文在考虑低真空空气阻尼力的同时,研究了梳齿电容倾斜的MEMS传感器对脉冲惯性信号的响应,并分析了DRIE工艺因素对器件性能的影响.研究结果表明,当传感器为没有静电力反馈的双边电容结构时,梳齿电容的不平行对传感器的响应位移、惯性脉冲响应线性度范围影响明显,且随着封装真空度增加而加重.若传感器有静电力反馈,惯性脉冲响应的灵敏度降低,但DRIE工艺因素的影响程度降低.为了抑制DRIE工艺导致的梳齿电容不平行因素的影响,文中还设计了一个新型的变电容面积的MEMS惯性传感器,并用ANSYS初步分析了其性能,设计了其详细的制作工艺流程.
