Based on the orthodox theory,a model of a single electron transistor （SET） of metallic tunneling junctions is built using the master equation method. Several parameters of the device, such as capacitance, resistance and temperature,are input into the model and thus the I-V curves are attained. These curves are consistent with those from other experiments; therefore, the model is verified. However, there still exists a difference between simulated results and experimental results,mainly comes from the stationary case of the master equation. In other words, precision of simulated results would be increased if the transient case of the master equation is considered. Moreover, the current increases exponentially at higher drain voltages, which is due to the fact that the barrier suppression is caused by the image charge potential.
介绍如何实现光学和电子束曝光系统之间的匹配和混合光刻的技术,包括:(1)光学曝光系统与电子束曝光系统的匹配技术;(2)投影光刻和JBX-5000LS混合曝光技术;(3)接触式光刻机和JBX-5000LS混合曝光技术;(4)大小束流混合曝光技术或大小光阑混合曝光技术;(5)电子束与光学曝光系统混合光刻对准标记制作技术.该技术已成功地应用于纳米器件和集成电路的研制工作,实现了20nm线条曝光,研制成功了27n m CMOS器件;进行了50nm单电子器件的演试;并广泛地用于100nm化合物器件和其他微/纳米结构的制造.
