The influence of the cell temperature (named interior environment temperature) and ambient air temperature (named exterior environment temperature) on the open-circuit voltage,short-circuit current,and output power has been carefully studied for the Si solar cells.The results show that one of the environment temperatures plays the major role,and the temperature dependence of device performance parameters is different for single crystalline and polycrystalline Si solar cells.Furthermore,the ambient air temperature builds a bridge for the comparison of the effect between the cell temperature and the illumination intensity on solar cell performance.Based on the experimental results,the reasons which cause the difference of the environment temperatures dependence are analyzed.
This paper aims to simulate the I–V static characteristic of the enhancement-mode（E-mode） Npolar GaN metal–insulator–semiconductor field effect transistor（MISFET） with self-aligned source/drain regions.Firstly, with SILVACO TCAD device simulation, the drain–source current as a function of the gate–source voltage is calculated and the dependence of the drain–source current on the drain–source voltage in the case of different gate–source voltages for the device with a 0.62 m gate length is investigated. Secondly, a comparison is made with the experimental report. Lastly, the transfer characteristic with different gate lengths and different buffer layers has been performed. The results show that the simulation is in accord with the experiment at the gate length of 0.62 m and the short channel effect becomes pronounced as gate length decreases. The E-mode will not be held below a100 nm gate length unless both transversal scaling and vertical scaling are being carried out simultaneously.
