Stable and persistent bipolar resistive switching was observed in an organic diode with the structure of indium-tin oxide （ITO）/bis（8-hydroxyquinoline） cadmium （Cdq2）/Al. Aggregate formation and electric field driven trapping and detrapping of charge carriers in the aggregate states that lie in the energy gap of the highest occupied molecular orbital （HOMO） and the lowest unoccupied molecular orbital （LUMO） of the organic molecule were proposed as the mechanism of the observed bipolar resistive switching, and this was solidly supported by the results of AFM investigations. Repeatedly set, read, and reset measurements demonstrated that the device is potentially applicable in non-volatile memories.
This paper proposes an effective method of fabricating top contact organic field effect transistors by using a pho- tolithographic process. The semiconductor layer is protected by a passivation layer. Through photolithographic and etching processes, parts of the passivation layer are etched off to form source/drain electrode patterns. Combined with conventional evaporation and lift-off techniques, organic field effect transistors with a top contact are fabricated suc- cessfully, whose properties are comparable to those prepared with the shadow mask method and one order of magnitude higher than the bottom contact devices fabricated by using a photolithographic process.
We present a numerical study of the effects of the energy barrier between the lowest unoccupied molecular orbital of the acceptor layer and the cathode, the thicknesses of the donor layer and acceptor layer on the distributions of carrier density, the electric fields and the electric potentials of organic planar heterojunction solar cells. We obtained the quantitative dependencies of the distribution of carrier density, electric fields and the electric potentials on these quantities. The results provide a theoretical foundation for the experimental study of open-circuit organic planar heterojunction solar cells.
MA ChaoZhuPENG YingQuanWANG RunShengLI RongHuaXIE HongWeiWANG YingXIE JiPengYANG Ting
Among the many possible device configurations for organic memory devices,organic field-effect transistor (OFET) memory is an emerging technology with the potential to realize lightweight,low-cost,flexible charge storage media.In this feature article,the recent progress in the classes of OFET-based memory,including floating gate OFET memory,polymer electret OFET memory,ferroelectric OFET memory and several other kinds of OFET memories with unique configurations,are introduced.Finally,the prospects and problems of OFETs memory are discussed.
WANG HongPENG YingQuanJI ZhuoYuLIU MingSHANG LiWeiLIU XingHua
有机场效应晶体管(Organic field effect transistor,OFET)的非线性特性是指其输出特性曲线在较低的漏极电压下出现类似于二极管的电压电流特性曲线,这种现象在有机场效应晶体管的实验研究中极为常见。Simonetti等通过引入随栅极电压变化的迁移率提出了模型并成功解释了这一现象,但实验中从器件转移特性得出的迁移率通常与栅极电压无关。本文通过引入常数迁移率对该模型进行改进,运用改进的模型研究了影响OFET非线性特性的主要因素,并对如何更加准确地获得器件参数进行了探究。
