Abstract： The undoped and Yb-doped HfO2 thin films were deposited on p-type single crystal St（100） substrates using RF magnetron sputtering method. The structure and electrical properties were investigated as a function of doping concentrations. The results showed that the presence of Yb could stabilize HfO2 in cubic phase. The dielectric constant was enhanced after in- troducing Yb3＋ ions into the HfO2 host. Compared with undoped HfO2 thin film, the Yb-doped l-IfO2 thin film exhibited a low leakage current. The silicate reaction between rare earth ions and SiO2 layers was used to eliminate interfacial silica and form a stable interface.
Sb-doped ZnO thin films with different values of Sb content （from 0 to 1.1 at.%） are deposited by the sol-gel dip- coating method under different sol concentrations. The effects of Sb-doping content, sol concentration, and annealing ambient on the structural, optical, and electrical properties of ZnO films are investigated. The results of the X-ray diffraction and ultraviolet-visible spectroscopy （UV-VIS） spectrophotometer indicate that each of all the films retains the wurtzite ZnO structure and possesses a preferred orientation along the c axis, with high transmittance （〉 90%） in the visible range. The Hall effect measurements show that the vacuum annealed thin films synthesized in the sol concentration of 0.75 mol/L each have an adjustable n-type electrical conductivity by varying Sb-doping density, and the photoluminescence （PL） spectra revealed that the defect emission （around 450 nm） is predominant. However, the thin films prepared by the sol with a concentration of 0.25 mol/L, despite their poor conductivity, have priority in ultraviolet emission, and the PL peak position shows first a blue-shift and then a red-shift with the increase of the Sb doping content.
