Modeling a memristor is an effective way to explore the memristor properties due to the fact that the memristor devices are still not commercially available for common researchers. In this paper, a physical memristive device is assumed to exist whose ionic drift direction is perpendicular to the direction of the applied voltage, upon which, corresponding to the HP charge-controlled memristor model, a novel threshold flux-controlled memristor model with a window function is proposed. The fingerprints of the proposed model are analyzed. Especially, a practical equivalent circuit of the proposed model is realized, from which the corresponding experimental fingerprints are captured. The equivalent circuit of the threshold memristor model is appropriate for various memristors based breadboard experiments.
A simple four-dimensional system with only one control parameter is proposed in this paper. The novel system has a line or no equilibrium for the global control parameter and exhibits complex transient transition behaviors of hyperchaotic attractors, periodic orbits, and unstable sinks. Especially, for the nonzero-valued control parameter, there exists no equilibrium in the proposed system, leading to the formation of various hidden attractors with complex transient dynamics. The research results indicate that the dynamics of the system shows weak chaotic robustness and depends greatly on the initial states.
