With modified necessary steps for SiGe implementation,multi-finger power SiGe H BT devices are fabricated in a CMOS process line with 125mm wafer.The devices s how quite high BV CBO 23V.The current gain is very stable over a wide I C.The f T is up to 7GHz at a DC bias of I C=40mA and V CE=8 V,which show high current handling capability.Under continuous conditions in B o peration,the 31dBm output power,10dB G p,and 33.3% of PAE are obtained at 3GHz .Based on extensive tests,it has been demonstrated that the yield on a wafer is up to 85%,which means that the research results are capable of commercialization .
