The recent development of high-strength magnesium alloys is focused on the role of the strengthening phases with a novel long-period stacking-ordered (LPSO) structure. This review detailed the main factors influencing the formation of LPSO phases, including alloying ele-ments, preparation methods, and heat treatments. Furthermore, process control in structure types, formation and transformation behavior, strengthening and toughening mechanisms of the LPSO phase were discussed. Finally, the current problems and development trends of high-strength Mg-Zn-RE alloys were also put forward.
In this paper,an InGaN metal-insulator-semiconductor(MIS) photodetector with an ultra-thin Al2O3 insulation layer deposited by atomic layer deposition(ALD) was studied.A high photoelectric responsivity of 0.25 A/W and a spectral responsivity rejection ratio of about three orders of magnitude at 1 V reverse bias were achieved for this MIS photodetector.The dominant carrier transport mechanism in the InGaN MIS photodetectors is submitted to the space charge limited current(SCLC) mechanism at high field and exhibits an Ohmic-like conduction at low electric field.The results indicate that the ultra-thin Al2O3 film deposited by the ALD technique can act as an excellent insulation dielectric for the InGaN photodetectors.
