We have investigated the anisotropic magnetocaloric effect and the rotating field magnetic entropy in Dy FeO3 single crystal. A giant rotating field entropy change of -ΔSM^R = 16.62 J/kg·K was achieved from b axis to c axis in bc plane at 5 K for a low field change of 20 k Oe. The large anisotropic magnetic entropy change is mainly accounted for the 4 f electron of rare-earth Dy^3＋ ion. The large value of rotating field entropy change, together with large refrigeration capacity and negligible hysteresis, suggests that the multiferroic ferrite Dy FeO3 singlecrystal could be a potential material for anisotropic magnetic refrigeration at low field, which can be realized in the practical application around liquid helium temperature region.
Temperature dependence of magnetic switching processes with multiple jumps in Fe/MgO（001） films is investigated by magnetoresistance measurements. When the temperature decreases from 300K to 80K, the measured three-jump hysteresis loops turn into two-jump loops. The temperature dependence of the fourfold in-plane magnetic anisotropy constant K1, domain wall pinning energy, and an additional uniaxial magnetic anisotropy constant KUare responsible for this transformation. The strengths of K1 and domain wall pinning energy increase with decreasing temperature, but KU remains unchanged. Moreover, magnetization reversal mechanisms, with either two successive or two separate 90°domain wall propagation, are introduced to explain the multi-jump magnetic switching process in epitaxial Fe/MgO（001） films at different temperatures.
An obvious weak localization correction to anomalous Hall conductance（AHC） in very thin CoFeB film is reported.We find that both the weak localization to AHC and the mechanism of the anomalous Hall effect are related to the CoFeB thickness.When the film is thicker than 3 nm,the side jump mechanism dominates and the weak locaUzation to AHC vanishes.For very thin CoFeB films,both the side jump and skew scattering mechanisms contribute to the anomalous Hall effect,and the weak localization correction to AHC is observed.
Design and synthesis of new organic functional materials with improved performance or novel properties are of great importance in the field of optoelectronics.Azulene,as a non-alternant aromatic hydrocarbon,has attracted rising attention in the last few years.Different from most common aromatic hydrocarbons,azulene has unique characteristics,including large dipole moment,small gap between the highest occupied molecular orbital（HOMO） and the lowest unoccupied molecular orbital（LUMO）.However,the design and synthesis of azulene-based functional materials are still facing several challenges.This review focuses on the recent development of organic functional materials employing azulene unit.The synthesis of various functionalized azulene derivatives is summarized and their applications in optoelectronics are discussed,with particular attention to the fields including nonlinear optics（NLO）,organic field-effect transistors（OFETs）,solar cells,and molecular devices.
Buffer layer provides an opportunity to enhance the quality of ultrathin magnetic films. In this paper, Co films with different thickness of Co Si2 buffer layers were grown on Si（001） substrates. In order to investigate morphology, structure,and magnetic properties of films, scanning tunneling microscope（STM）, low energy electron diffraction（LEED）, high resolution transmission electron microscopy（HRTEM）, and surface magneto-optical Kerr effect（SMOKE） were used. The results show that the crystal quality and magnetic anisotropies of the Co films are strongly affected by the thickness of Co Si2 buffer layers. Few Co Si2 monolayers can prevent the interdiffusion of Si substrate and Co film and enhance the Co film quality. Furthermore, the in-plane magnetic anisotropy of Co film with optimal buffer layer shows four-fold symmetry and exhibits the two-jumps of magnetization reversal process, which is the typical phenomenon in cubic（001） films.
The magneto-optical Kerr effect susceptometry technique is proposed to determine the uniaxial magnetic anisotropy （UMA） constant Ku. The magnetic properties of Cu/Fe/SiO2/Si grown by dc magnetron sputtering were investigated. The in-plane uniaxial magnetic anisotropy was probed by the magneto-optical Kerr effect （MOKE）. The value of UMA, Ku = 2.5 x 103 J/m3, was simulated from the field dependence of ac susceptibility along the hard axis according to the Stoner-Wohlfarth （S-W） model, which is consistent with Ku = 2.7~ 103 J/m3 calculated from the magnetic hysteresis loops. Our results show that the magneto-optical Kerr effect susceptometry can be employed to determine the magnetic anisotropy constant owing to its high sensitivity.
A planar Hall effect（PHE） is introduced to investigate the magnetization reversal process in single-crystalline iron film grown on a Si（001） substrate.Owing to the domain structure of iron film and the characteristics of PHE,the magnetization switches sharply in an angular range of the external field for two steps of 90° domain wall displacement and one step of 180°domain wall displacement near the easy axis,respectively.However,the magnetization reversal process near the hard axis is completed by only one step of 90° domain wall displacement and then rotates coherently.The magnetization reversal process mechanism near the hard axis seems to be a combination of coherent rotation and domain wall displacement.Furthermore,the domain wall pinning energy and uniaxial magnetic anisotropy energy can also be derived from the PHE measurement.
Our recent research achievements in the perpendicular magnetic anisotropy （PMA） properties of the CoFeB sand- wiched by MgO and tantalum layers are summarized. We found that the PMA behaviors of Ta/CoFeB/MgO and MgO/CoFeB/Ta thin films are different. The larger PMA in the latter film is related to the lower magnetization of CoFeB deposited on MgO. Furthermore, we have demonstrated a large anomalous Hall effect in perpendicular CoFeB thin fihn. Our results show large anomalous Hall resistivity, large longitudinal resistivity, and low switching field can be achieved, all at the same time, in the perpendicular CoFeB thin film. Anomalous Hall effect with high and linear sensitivity is also found in an MgO/CoFeBFFa thin film with a thick MgO layer, which opens a door tbr future device applications of perpendicular ferromagnetic thin films.
