We report the fabrication details of a monolithically integrated electro-absorption modulated distributed feedback laser （EML） based on the ion-implantation induced quantum well intermixing （QWI） technique. To well-preserve material quality in the laser region, thermal-oxide SiO2 is deposited before implantation and the ion-implantation buffer layer is etched before annealing. Thirteen pairs quantum well and barrier are employed to compensate deterioration of the modulator＇s extinction ratio （ER） caused by the QWI process. The fabricated EML exhibits an 18 dB static ER at 5 V reverse bias. The 3 dB small signal modulation band- width of modulator is over 13.5 GHz indicating that this EML is a suitable light source for over 16 Gb/s optical transmission links.
