A novel LDNMOS embedded silicon controlled rectifier(SCR) was proposed to enhance ESD robustness of high-voltage(HV) LDNMOS based on a 0.5 μm 18 V CDMOS process. A two-dimensional(2D) device simulation and a transmission line pulse(TLP) testing were used to analyze the working mechanism and ESD performance of the novel device. Compared with the traditional GG-LDNMOS, the secondary breakdown current(It2) of the proposed device can successfully increase from 1.146 A to 3.169 A with a total width of 50 μm, and ESD current discharge efficiency is improved from 0.459 m A/μm2 to 1.884 m A/μm2. Moreover, due to their different turn-on resistances(Ron), the device with smaller channel length(L) owns a stronger ESD robustness per unit area.
A new complementary metal oxide semiconductor UV/blue-extended photodiode was presented for light detection in the UV/blue spectral range. Photoelectric characteristics of this presented photodiode were studied by numerical modeling and device simulation. Technology computer aided design simulation was done first to analyze its photoelectric characteristics. The structure characteristic and depletion situation of space between two adjacent P+ anodes were discussed. The reverse characteristic, spectral response characteristic and DC characteristic were discussed in detail. For the numerical modeling, dead layer effect is considered in the building of analytical mode. Dead layer is a space in which the boron doping profile decreases towards the surface due to high doping effects and boron redistribution, which affects the sensitivity of photodiode in the UV range seriously. Reverse characteristics and spectral response characteristics were modeled and analyzed typically. At last, silicon test results were given and compared with the simulated result, which shows reasonable match for each.
A novel integrated ultraviolet（UV） photodetector has been proposed, which realizes a high UV selectivity by combining a conventional UV-selective photodiode with an extra infrared（IR） photodiode. The IR photodiode is designed for compensating the photocurrent response of the UV photodiode in the infrared band and is 15 times smaller than the UV one. The integrated photodetector has been fabricated in a 0.35 μm standard CMOS technology. Some critical performance indices of this new structure photodetector, such as spectral responsivity, breakdown voltage, quenching waveform, and transient response, are measured and analyzed. Test results show that the complementary UV–IR photodetector has a maximum spectral responsivity of 0.27 A·W-1 at the wavelength of 400 nm. The device has a high UV selectivity of 3000,which is much higher than that of the single UV photodiode.
结合3D-TOF(Time of flight)图像传感器的特点与应用背景,以德国PMD Tec的一种TOF芯片-PMD PhotoICs?19K-S3为例阐述TOF传感器的工作原理并分析其驱动时序。以Xilinx公司的FPGA为开发平台,用Verilog完成驱动时序的设计并进行仿真。经过验证,上位机能够正确显示出传感器采集到的深度(Depth)数据。
设计了一种适用于过高磁场抗扰度的电容式隔离型全差分Σ-Δ调制器。它采用单环2阶1位量化的前馈积分器结构,运用斩波技术降低低频噪声和直流失调。与传统的全差分结构相比,该调制器的每级积分器均采用4个采样电容,在一个时钟周期内能实现两次采样与积分,所需的外部时钟频率仅为传统积分器的一半,降低了运放的压摆率及单位增益带宽的设计要求,实现了低功耗。基于CSMC 0.35μm CMOS工艺,在5 V电源电压、10 MHz采样频率和256过采样率的条件下进行电路仿真。后仿真结果表明,调制器的SNDR为100.7 d B,THD为-104.9 d B,ENOB可达16.78位,总功耗仅为0.4 m A。
A novel composite ultraviolet(UV)/blue photodetector is proposed in this paper.Lateral ring-shaped PN junction is used to separate photogenerated carriers and inject the non-equilibrium excess carriers to the bulk,changing the bulk potential and shifting the threshold voltage of the metal-oxide-semiconductor field-effect transistor(MOSFET)as well as the drain current.Numerical simulation is carried out,and the simulation results show that the composite photodetector has the enhanced responsivity for UV/blue spectrum.It exhibits very high sensitivity to weak and especially ultra-weak light.A responsivity of 7000 A/W is obtained when the photodetector is illuminated under incident optical power of 0.01μW.As a result,this proposed combined photodetector has great potential for UV/blue and ultra-weak light applications.
