The GaN thin film is successfully grown on the sample of ZnO/Si by dual ion beams deposition (DIBD) system.The thin film GaN/ZnO/Si is characterized by the in-situ X-ray photoelectron spectroscopy (XPS).It is shown that after a thin GaN film grown on the Zn/Si,the peaks of the Zn and O are not observed.This indicates that the GaN film can be successfully grown on the ZnO/Si by the dual ion beam deposition (DIBD) system associated with the pulsed laser deposition (PLD) method.
利用 X 射线衍射(XRD),X 射线摇摆曲线(XRC)和 X 射线光电子能谱(XPS)分析方法对氧离子束辅助激光淀积生长的 ZnO/Si 异质结薄膜进行了分析。结果表明:用该法可生长出高度 c 轴单一取向 ZnO 薄膜,XRC 的半高宽度(FWHM)仅为2.918°。表明此生长方法经优化,可生长出单晶质量很好的 ZnO/Si 薄膜。
