对TC4/QAL10-3-1.5直接扩散连接的研究表明:在连接温度T=850℃、连接压力P=8 MPa、保温时间t=30 m in的条件下,能够实现接头的扩散连接,然而在扩散接头的局部有裂纹产生。利用扫描电镜对扩散接头进行了显微组织分析,利用能谱仪对扩散接头的元素扩散距离和浓度分布进行了分析。结果表明:形成了厚度为10μm的扩散接头,元素扩散距离与保温时间之间满足抛物线规律x2=Kp(t-t0);由于Cu与Ti的扩散系数不同,导致发生扩散接头向TC4方向偏移的克肯达尔现象。利用界面孔洞理论解释了裂纹产生的机理,提出了工艺改进的方法,并获得了较好的效果。
The diffusion bonding was carried out to join Ti alloy (Ti-6Al-4V) and tin-bronze ( ZQSn10-10 ) with Ni and Ni + Cu interlayer. The microstructures of the diffusion bonded joints were analyzed by scanning electron microscope (SEM), energy dispersive spectroscopy ( EDS ) and X-ray diffraction ( XRD ). The results show that when the interlayer is Ni or Ni + Cu transition metals both could effectively prevent the diffusion between Ti and Cu and avoid the formation of the Cu-Ti intermetallic compounds (Cu3Ti, CuTi etc. ). But the Ni-Ti intermetallic compounds (NiTi, Ni3Ti) are formed on the Ti-6Al-4V/Ni interface. When the interlayer is Ni, the optimum bonding parameters are 830 ℃/10 MPa/30 min. And when the interlayer is Ni + Cu, the optimum bonding parameters are 850 ℃/10 MPa/20 min. With the optimum bonding parameters, the tensile strength of the joints with Ni and Ni + Cu interlayer both are 155.8 MPa, which is 65 percent of the strength of ZQSn10-10 base metal.
The experimental investigation of the direct diffusion bonding of Ti-6Al-4V to ZQSn10-10 was carried out in vacuum. The microstructure of bonded joint was studied by scanning electron microscopy (SEM), energy dispersive spectroscopy ( EDS ) and the mechanical properties were detected by the tensile experiments. The microstructure and tensile strength of the joint mainly depend on the bonding temperature and bonding time. A satisfying diffusion bonded interface with a tensile strength of 73.9 MPa can be obtained under the condition of bonding temperature 850℃ for 30 rain. Three kinds of reaction products were observed in the bonded interface, namely β-Ti, CoaTi and CuSn3Ti5. And the brittle Cu3Ti and CuSn3 Ti5 are mainly responsible for lowering the strength of the bonded joint. The diffusion distances of Sn , Cu and Ti and square root of bonding time are approximately linear relationship. And diffusion velocity of Sn, Cu and Ti in the diffusion reaction layer are 0. 013 9,0. 069 7 and 0. 056 4 mm^2/s.