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国家重点基础研究发展计划(2013CB922103)

作品数:4 被引量:4H指数:1
相关作者:张帅李兆国宋凤麒更多>>
相关机构:南京大学更多>>
发文基金:国家重点基础研究发展计划国家自然科学基金江苏省自然科学基金更多>>
相关领域:理学电子电信一般工业技术更多>>

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The basis of organic spintronics: Fabrication of organic spin valvesl
2014年
姜生伟丁海峰蒋正生吴镝
Unveiling the charge density wave inhomogeneity and pseudogap state in 1T-TiSe_2
2018年
By using scanning tunneling microscopy(STM)/spectroscopy(STS), we systematically characterize the electronic structure of lightly doped 1 T-TiSe_2, and demonstrate the existence of the electronic inhomogeneity and the pseudogap state. It is found that the intercalation induced lattice distortion impacts the local band structure and reduce the size of the charge density wave(CDW) gap with the persisted 2 × 2 spatial modulation. On the other hand, the delocalized doping electrons promote the formation of pseudogap. Domination by either of the two effects results in the separation of two characteristic regions in real space, exhibiting rather different electronic structures. Further doping electrons to the surface confirms that the pseudogap may be the precursor for the superconducting gap. This study suggests that the competition of local lattice distortion and the delocalized doping effect contribute to the complicated relationship between charge density wave and superconductivity for intercalated 1 T-TiSe_2.
Kai-Wen ZhangChao-Long YangBin LeiPengchao LuXiang-Bing LiZhen-Yu JiaYe-Heng SongJian SunXianhui ChenJian-Xin LiShao-Chun Li
Recent advances in spin transport in organic semiconductors被引量:3
2013年
The spin relaxation time is long in organic semiconductors because of the weak spin-orbit and hyperfine interactions,leading to intensive study on spin transport in organic semiconductors.The rapid progress towards utilizing spin degree of freedom in organic electronic devices is occurring.While the spin injection,transport and detection in organic semiconductors are demonstrated,the fundamental physics of these phenomena remains unclear.This paper highlights recent progress that has been made,focusing primarily on present experimental work.
JIANG ShengWeiYUE FengJuanWANG ShenWU Di
拓扑绝缘体的普适电导涨落被引量:1
2015年
拓扑绝缘体因其无能量耗散的拓扑表面输运而备受关注,揭示拓扑表面态因其π的贝利相位而产生的拓扑输运现象,将有助于拓扑绝缘体相关器件的应用开发.本文回顾了普适电导涨落(UCF)揭示拓扑绝缘体奇异输运性质的研究进展.通过调控温度、角度、门电压、垂直磁场和平行磁场等外部参量,实现了对拓扑绝缘体的UCF效应的系统研究,证实了拓扑绝缘体中二维UCF的输运现象,并通过尺寸标度规律获得了UCF的拓扑起源的实验证据,讨论了拓扑表面态的UCF的统计对称规律.从而实现了对拓扑绝缘体UCF效应的较为完整的理解.
李兆国张帅宋凤麒
关键词:拓扑绝缘体量子输运
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