Pb0.97La0.02Zr0.95Ti0.05O3(PLZT)antiferroelectric thick films derived from different precursor solution concentrations are prepared on platinized silicon substrates by sol-gel processing.The films present polycrystalline perovskite structure with a(100)preferred orientation by X-ray diffraction(XRD)analysis.The antiferroelectricity of the films is confirmed by the double hysteresis behaviors of polarization and double-bufferfly response of dielectric constant under the applied electrical field.Antiferroelectric properties and dielectric constant are improved while the polarization characteristic values are reduced with the increase of precursor solution concentration.The films at higher precursor solution concentration exhibit excellent dielectric properties.
Pb0：97La0：02（Zr0：75Sn0：25x Ti x/O3（x D0.10, 0.105, 0.11）（PLZST） antiferroelectric ceramics with highly preferred-（110） orientation were successfully fabricated via the conventional solid-state reaction method.The antiferroelectric nature of PLZST ceramics induced by electric field was demonstrated by the dielectric constant-temperature（D-T） and the polarization-electric field（P-E） measurement. Typical phase transition from ferroelectric（FE） to antiferroelectric（AFE）, and then to paraelectric（PE） is obtained. The results indicate that the phase transition behavior is suppressed with increasing of x, and T c is remarkably shifted to higher temperature of168 ℃, 170 ℃ and 174 ℃, respectively. Besides, high phase transition current（110 6A, 810 7A and 610 7A, respectively） is obtained with temperature induced. Consequently, the excellent electric properties and the restraint between temperature and electric field would provide basis on the application of PLZST antiferroelectric ceramics in microelectronic integrated systems and sophisticated weapons systems.
