A novel bonding method using silicate gel as bonding medium is developed.High reflective SiO 2/Si mirrors deposited on silicon substrates by e-beam deposition are bonded to the active layers at a low temperature of 350℃ without any special treatment on bonding surfaces.The reflectivities of the mirrors can be as high as 99 9%.A Si-based narrow band response InGaAs photodetector is successfully fabricated,with a quantum efficiency of 22 6% at the peak wavelength of 1 54μm,and a full width at half maximum of about 27nm.This method has a great potential for industry processes.
A 10Gb/s transmitter module containing an electroabsorption modulator monolithically integrated with a distributed feedback (DFB) semiconductor laser is fabricated using the identical epitaxial layer scheme.Gain-coupling mechanism is employed to improve the single mode yield of the DFB laser,while inductively coupled plasma dry etching technique is utilized to reduce the modulator capacitance.The integrated device exhibits a threshold current as low as 12mA and an extinction ratio over 15dB at -2V bias.The small signal modulation bandwidth is measured to be over 10GHz.The transmission experiment at 10Gb/s indicates a power penalty less than 1dB at a bit-error-rate of 10 -12 after transmission through 35km single mode fiber.
