φ200 mm silicon single crystals were grown in the φ450 mm hot zone of a Czochralski （CZ） furnace. By modifying the pattern and the velocity of the argon flow, the silicon single crystals with different oxygen concentrations were obtained. Through numerical simulation, the velocity of the argon gas flow was plotted for the first time. The experiment resuits were analyzed and the optimum condition of the argon flow with the lowest oxygen concentration was obtained.
The pulling rate in czochralski silicon (CZSi) growth is important for reducing the cost of solar cell. In this paper, double-heater, heat shield and composite argon duct system were introduced in the Ф450 mm hot zone of a Czochralski furnace. The pulling rate under different thermal system was recorded in experiments. Argon flow and temperature fields were simulated by finite element method(FEM). Experimental results and numerical simulation indicate that double-heater and composite argon duct system can enhance obviously the release rate of latent heat. In Φ 200 mm Czochralski silicon (CZSi) growth, average pulling rate can increase from 0.6 mm·min-1 in the conventional hot zone to 0.8 mm·min-1 in the modified hot zone.
REN Bingyan YANG Jiankun LI Yanlin LIU Xiaoping WANG Minhua
