Excellent soft magnetic and high frequency prop- erties were obtained successfully in the （Ni75Fe25）x（ZnO）1-x granular films fabricated on the glass substrate by RF magnetron oblique sputtering. The microstructure, mag- netic and high frequency properties were investigated systematically. High resolution transmission electron micrographs show that the film consists of fcc Ni75Fe25 particles uniformly embedded in an amorphous insulating matrix ZnO with particle size a few nanometers. The （Ni75Fe25）x（ZnO）1-x films exhibit excellent soft magnetic properties in a widex range from 0.50 to 0.80 with coer- civity not exceeding 5 × 10^-4 T, which is ascribed to the exchange coupling between magnetic particles. Especially for the sample with x = 0.64, coercivities in hard and easy axes are 5.0 ×10^-5 and 3.6 × 10^-4 T, respectively, and the electric resistivity ρ reaches 1,790 μΩ.cm. The dependence of complex permeability u = u′- ju″on frequency f shows that the real part u′ is more than 130 below 500 MHz, and the ferromagnetic resonance fre- quency fr reaches 1.32 GHz, implying the promising for high frequency application.
Negative capacitance （NC） in dye-sensitized solar cells （DSCs） has been confirmed experimentally. In this work, the recombination behavior of carriers in DSC with semiconductor interface as a carder＇s transport layer is explored theoreti- cally in detail. Analytical results indicate that the recombination behavior of carriers could contribute to the NC of DSCs under small signal perturbation. Using this recombination capacitance we propose a novel equivalent circuit to completely explain the negative terminal capacitance. Further analysis based on the recombination complex impedance show that the NC is inversely proportional to frequency. In addition, analytical recombination resistance is composed by the alternating current （AC） recombination resistance （Rrac） and the direct current （DC） recombination resistance （Rrdc）, which are caused by small-signal perturbation and the DC bias voltage, respectively. Both of two parts will decrease with increasing bias voltage.
Room-temperature ferromagnetism with a Curie temperature higher than 380 K was studied in GaN: Mn thin films grown by metal-organic chemical vapor deposition. By etching artificial microstructures on the GaN: Mn layer,strong magnetic responses were observed in the magnetic force microscopy (MFM) measurement,which revealed that the films were independent of dopant particles and clusters. Numerical simulation on the data of atomic force microscope (AFM) and MFM measurements covering the whole microstructure validated the formation of long range magnetic order. This result excluded a variety of controversial origins of room-temperature ferromagnetism in the GaN: Mn and gave a strong evidence of our GaN: Mn as the intrinsic diluted magnetic semiconductor (DMS). The forwarded method for accurate characterization of long range magnetic order could be applied to a wide range of DMS and diluted magnetic oxide (DMO) systems.
