为了提高SOI(silicon on insulator)器件的击穿电压,同时降低器件的比导通电阻,提出一种槽栅槽源SOI LDMOS(lateral double-diffused metal oxide semiconductor)器件新结构.该结构采用了槽栅和槽源,在漂移区形成了纵向导电沟道和电子积累层,使器件保持了较短的电流传导路径,同时扩展了电流在纵向的传导面积,显著降低了器件的比导通电阻.槽栅调制了漂移区电场,同时,纵向栅氧层承担了部分漏极电压,使器件击穿电压得到提高.借助2维数值仿真软件MEDICI详细分析了器件的击穿特性和导通电阻特性.仿真结果表明:在保证最高优值的条件下,该结构的击穿电压和比导通电阻与传统SOI LDMOS相比,分别提高和降低了8%和45%.
The effect of sample geometry aspect ratio （l/w） on the giant magnetoimpedance （GMI） in Fe67Co18Si11B4 amorphous ribbons was investigated systematically. The GMI profiles were measured as a function of the external magnetic field at different frequencies up to 110 MHz. The results show that there exists a critical aspect ratio （（l/w）0 = 5.4） below which the maximum GMI effect and sensitivity η decrease with decreasing l/w and above which the maximum GMI effect keeps almost constant and η decreases with increasing l/w. The observed dependence on aspect ratio as （l/w） 〈 （l/w）0 is correlated with the magnetization process： Complex domain structures emerged near the ribbon ends to decrease the magnetostatic energy, modify the transverse permeability and consequently GMI response. Contributions from transverse permeability and resistance may dominantly determine the change of GMI effect as （l/w） 〉 （l/w）0.
