In this paper,a new upconversion luminescent material co-doped with Erbium and Ytterbium is reported. The upconversion luminescence transition routes and related properties are studied. The results show that the absorption and emission intensities under excitation of 980 nm laser increase with the increase of the Yb3+ concentration. The red emission is stronger than the green emission. The energy transfer process plays an important role in the upconversion mechanism.
ZHAO SuLing1,XU Zheng1,WANG LiHui2 & S. Wageh3 1 Institute of Optoelectronic Technology,Key Laboratory of Luminescence and Optical Information (Beijing Jiaotong University),Ministry of Education,Beijing 100044,China
The properties of poly（3-hexylthiophene）：（6,6）-phenyl C61 butyric acid methyl ester （P3HT：PCBM） organic pho- tovoltaic devices （OPVs） with an indium tin oxide （ITO） anode treated by a KMnO4 solution are investigated. The optimized KMnO4 solution has a concentration of 50 rag/L, and ITO is treated for 15 min. The modification of ITO anode results in an enhancement of the power conversion efficiency （PCE） of the device, which is responsible for the increase of the photocurrent. The performance enhancement is attributed to the work function modification of the ITO substrate through the strong oxygenation of KMnO4, and then the charge collection efficiency is improved.
The microstructural, optical, and magnetic properties and room-temperature photoluminescence （PL） ofMn-doped ZnO thin films were studied. The chemical compositions were examined by energy dispersive X-ray spectroscopy （EDS） and the charge state of Mn ions in the ZnO：Mn films was characterized by X-ray photoelectronic spectrometry （XPS）. From the X-ray diffraction （XRD） data of the samples, it can be found that Mn doping does not change the orientation of ZnO thin films. All the films prepared have a wurtzite structure and grow mainly along the c-axis orientation. The grain size and the residual stress were calculated from the XRD results. The optical transmittance of the film decreases with the increase of manganese content in ZnO. The room-temperature photoluminescence of the films shows that the in- tensity of near band energy （NBE） emission depends strongly on the Mn content. The hysteresis behavior indicates that the films with the Mn content below 9at% are ferromagnetic at room temperature.
Li-wei Wang Zheng Xu Fu-junZhang Su-ling Zhao Li-fang Lu
