搜索到864篇“ NANOIMPRINT“的相关文章
纳米压印技术在太阳能电池中应用的研究进展
2024年
对纳米压印技术原理、分类和不同领域的应用进行了简单阐述。总结了纳米压印技术在不同类型的太阳能电池,如晶硅太阳能电池、薄膜太阳能电池、聚合物太阳能电池及其他新型太阳能电池中的应用,并重点阐述了纳米压印技术在制备太阳能电池减反膜、图案化衬底、图案化活性层和图案化电极等有效减少太阳能电池表面太阳光反射和大大提高太阳能电池光电转换效率方面的研究进展。最后,针对纳米压印技术在产业化中所面临的困难进行了分析和总结,并提出了纳米压印技术在太阳能电池领域未来的研究重点和发展方向。
李芳张静刘彦伯
关键词:纳米压印太阳能电池图案化光电转换效率
纳米压印技术的产业化问题分析
2024年
阐述纳米压印技术是一种新型的微纳加工先进制造技术,具有分辨率高、产量高和成本低等优点,在光学、集成电路、数据存储、生命科学等领域有着广泛的应用前景。介绍纳米压印工艺原理,分析纳米压印技术的产业化问题,并根据实际状况,给出中国纳米压印产业化发展的建议。
李芳樊丽陈晨张静
关键词:集成电路数据存储纳米压印
负性光刻胶在纳米压印光刻技术的应用前景
2024年
光刻技术在微纳米制造领域具有关键作用,而负性光刻胶因其低成本、高黏度的特点备受青睐。然而,负性光刻胶的分辨率限制在光刻线宽小于3μm时成为制约其应用的主要问题。结合纳米压印光刻技术的发展,探讨了负性光刻胶在纳米压印光刻领域的新趋势。纳米压印光刻技术的物理方法使其不受光刻胶分辨率限制,为负性光刻胶的应用提供了新的机遇。结合负性光刻胶的低成本优势,纳米压印光刻技术与负性光刻胶相结合,呈现出了不可替代的应用前景。
杨志伟吕薪羽
关键词:光刻技术纳米压印光刻技术
Flexible nanoimprint lithography enables high-throughput manufacturing of bioinspired microstructures on warped substrates for efficient III-nitride optoelectronic devices
2024年
III-nitride materials are of great importance in the development of modern optoelectronics,but they have been limited over years by low light utilization rate and high dislocation densities in heteroepitaxial films grown on foreign substrate with limited refractive index contrast and large lattice mismatches.Here,we demonstrate a paradigm of high-throughput manufacturing bioinspired microstructures on warped substrates by flexible nanoimprint lithography for promoting the light extraction capability.We design a flexible nanoimprinting mold of copolymer and a two-step etching process that enable high-efficiency fabrication of nanoimprinted compound-eye-like Al2O3 microstructure(NCAM)and nanoimprinted compound-eye-like SiO_(2)microstructure(NCSM)template,achieving a 6.4-fold increase in throughput and 25%savings in economic costs over stepper projection lithography.Compared to NCAM template,we find that the NCSM template can not only improve the light extraction capability,but also modulate the morphology of AlN nucleation layer and reduce the formation of misoriented GaN grains on the inclined sidewall of microstructures,which suppresses the dislocations generated during coalescence,resulting in 40%reduction in dislocation density.This study provides a low-cost,high-quality,and high-throughput solution for manufacturing microstructures on warped surfaces of III-nitride optoelectronic devices.
Siyuan CuiKe SunZhefu LiaoQianxi ZhouLeonard JinConglong JinJiahui HuKuo-Sheng WenSheng LiuShengjun Zhou
关键词:BIOINSPIRED
Nanoimprint-induced strain engineering of two-dimensional materials
2024年
The high stretchability of two-dimensional(2D)materials has facilitated the possibility of using external strain to manipulate their properties.Hence,strain engineering has emerged as a promising technique for tailoring the performance of 2D materials by controlling the applied elastic strain field.Although various types of strain engineering methods have been proposed,deterministic and controllable generation of the strain in 2D materials remains a challenging task.Here,we report a nanoimprint-induced strain engineering(NISE)strategy for introducing controllable periodic strain profiles on 2D materials.A three-dimensional(3D)tunable strain is generated in a molybdenum disulfide(MoS_(2))sheet by pressing and conforming to the topography of an imprint mold.Different strain profiles generated in MoS_(2)are demonstrated and verified by Raman and photoluminescence(PL)spectroscopy.The strain modulation capability of NISE is investigated by changing the imprint pressure and the patterns of the imprint molds,which enables precise control of the strain magnitudes and distributions in MoS_(2).Furthermore,a finite element model is developed to simulate the NISE process and reveal the straining behavior of MoS_(2).This deterministic and effective strain engineering technique can be easily extended to other materials and is also compatible with common semiconductor fabrication processes;therefore,it provides prospects for advances in broad nanoelectronic and optoelectronic devices.
Chuying SunJianwen ZhongZhuofei GanLiyang ChenChuwei LiangHongtao FengZhao SunZijie JiangWen-Di Li
关键词:STRAINDIMENSIONALMOLYBDENUM
Beyond the lab:a nanoimprint metalens arraybased augmented reality
2024年
A see-through augmented reality prototype has been developed based on an ultrathin nanoimprint metalens array,opening up a full-colour,video-rate,and low-cost 3D near-eye display.
Chi LiHaoran Ren
关键词:IMPRINT
基于紫外纳米压印光刻的生物纳米孔测序MEMS芯片设计
2024年
纳米孔测序作为最新一代的基因测序技术,在生物医学和临床应用中起着至关重要的作用。测序系统中的MEMS结构通常采用传统光刻工艺来实现,本文首次运用紫外纳米压印光刻(UV-NIL)工艺来验证实现纳米孔测序系统中的MEMS芯片的可能性。采用传统光刻工艺,制造了3种用于纳米孔测序的MEMS双层结构的硅晶圆。这些硅晶圆被用作母板,将其MEMS结构图案精准复制到聚二甲基硅氧烷(PDMS)上,形成压印软模,再用UV-NIL工艺在硅基底上压印出所需的MEMS结构。最后,通过光学和电学两种测试表征手段,成功证实UV-NIL工艺在制造MEMS芯片方面的有效性和可行性。相较于传统光刻,UV-NIL的成功运用将极大提高工艺稳定性并大幅缩减成本。
姜保侍南吴炫烨徐屹峰
关键词:纳米孔基因测序
自浸润式纳米压印耦合实现量子点发光二极管性能提升
2024年
胶体量子点材料因其优良的窄发射光谱、可调发射波长、高发光效率和优异的稳定性而被广泛研究,且同时具有溶液可加工性使得量子点发光二极管(Quantum dot light-emitting diode,QLED)具有广泛的适用性和应用。然而,器件自身存在的基底模式导致QLED器件大量光子被限制在内部无法利用。本文基于纳米压印工艺同时利用聚二甲基硅氧烷(Polydimethylsiloxane,PDMS)材料本身的表面结合能开发出溶剂自浸润式纳米压印工艺,对压力依赖度低的同时简化了工艺流程,制备出高质量周期性的1.3,1,0.5μm三种尺寸的微纳结构图案层,对红、绿、蓝三色QLED器件进行耦合实现光提取。在这种情况下,1.3μm微纳结构耦合绿光QLED器件亮度达到715069 cd·m^(-2),最大外量子效率(External quantum efficiency,EQE)和电流效率分别提升至12.5%和57.3 cd·A^(-1);1μm尺寸耦合的蓝光QLED器件各电学性能提升接近200%;0.5μm尺寸耦合红光QLED器件EQE也从17.3%提升至20.5%。并通过角分布测试,证明微纳结构不会对QLED器件发光强度造成影响,仍然接近朗伯体发射。本工作提出的溶剂自浸润式纳米压印工艺及QLED光提取方法,为QLED的性能提升提供了一条简单有效的途径。
梁龙郑悦婷林立华胡海龙李福山
关键词:纳米压印
纳米压印光刻工艺及其制造设备
2023年
简要介绍了纳米压印技术的原理及应用,阐述了热纳米压印、紫外纳米压印、微接触压印等纳米压印工艺,分析了每种工艺的特点及优势;同时总结了纳米压印设备的3个关键技术,重点分析了精密对准调平技术、压力控制技术和模板分离技术。
李俊
关键词:纳米压印调平压力控制
马来酰亚胺-丙烯酸酯共聚物的制备及在热纳米压印抗蚀剂的应用
2023年
马来酰亚胺与丙烯酸酯通过自由基溶液聚合制备了马来酰亚胺-丙烯酸酯共聚物(P(AA-MI-AHA))。根据凝胶渗透色谱,共聚物的多分散系数低于2,表现出窄的分子量分布特点;根据热失重分析和差示扫描量热分析,聚合物热分解温度高于140℃,玻璃化温度约为128℃,展现出较好的热稳定性。将共聚物用作热纳米压印抗蚀剂材料,研究了共聚物的微纳米图案复制能力。扫描电子显微镜观察到排列规整的条纹图案,分辨率约为100 nm。综上表明,所得马来酰亚胺-丙烯酸酯共聚物用作热纳米压印抗蚀剂材料展现出较好的图像复制能力。
韦南君赵晶蔡雅娟杨旭刘洋孙义兴李一博杨子昊吴雅各岳婷盖景刚
关键词:丙烯酸酯马来酰亚胺纳米压印抗蚀剂分辨率

相关作者

王智浩
作品数:1被引量:0H指数:0
供职机构:武汉光电国家实验室
研究主题:LIGHT_EMITTING_DIODES PHOTONIC_CRYSTAL 纳米压印技术 PHOTORESIST NANOIMPRINT
刘文
作品数:1被引量:0H指数:0
供职机构:武汉光电国家实验室
研究主题:LIGHT_EMITTING_DIODES PHOTONIC_CRYSTAL 纳米压印技术 PHOTORESIST NANOIMPRINT